Pressure-induced structural transition in chalcopyrite ZnSiP2
نویسندگان
چکیده
منابع مشابه
Pressure-induced iso-structural phase transition and metallization in WSe2
We present in situ high-pressure synchrotron X-ray diffraction (XRD) and Raman spectroscopy study, and electrical transport measurement of single crystal WSe2 in diamond anvil cells with pressures up to 54.0-62.8 GPa. The XRD and Raman results show that the phase undergoes a pressure-induced iso-structural transition via layer sliding, beginning at 28.5 GPa and not being completed up to around ...
متن کاملPressure-induced structural phase transition in the Bechgaard-Fabre salts
The crystal structures of the quasi-one-dimensional organic salts (TMTTF)2PF6 and (TMTSF)2PF6 were studied by pressure-dependent x-ray diffraction up to 10 GPa at room temperature. The unit-cell parameters exhibit a clear anomaly due to a structural phase transition at 8.5 and 5.5 GPa for (TMTTF)2PF6 and (TMTSF)2PF6, respectively.
متن کاملPressure-induced structural phase transition of paracrystalline silicon
We report on the pressure-induced phase transition in a model of paracrystalline silicon ~amorphous silicon with a crystalline grain! using an ab initio constant pressure simulation technique. The paracrystalline model transforms into a high-density amorphous phase at 16 GPa with a discontinuous volume change of ;24%. The transformation of the crystalline grain begins at the boundary and procee...
متن کاملOPTICAL ABSORPTION IN ZnSiP2
The polarised absorption coefficient of ZnSiP? near the fundamental absorption edge has been studied. Three singularities were found for E l c which are attributed to pseudodirect transitions. The absorption for El/ c is mainly due to indirect transitions. A theoretical curve was fitted to the experimental results with the aid of the relative theoretical intensities for pseudodirect transitions...
متن کاملStructural and Electronic Properties of Chalcopyrite Semiconductors
We have studied the structural and electronic properties of pure, deffect and doped chalcopyrite semiconductors using Density functional theory (DFT) based first principle technique within Tight binding Linear Muffin Tin orbital (TB-LMTO) method. Our calculated structural parameters such as lattice constant, anion displacement parameter(u) in case of pure chalcopyrite and anion displacement par...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2017
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4981889